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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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Semiconducting van der Waals Interfaces as Artificial Semiconductors.

Evgeniy Ponomarev1, Nicolas Ubrig1, Ignacio Gutiérrez-Lezama1

  • 1DQMP and GAP , Université de Genéve , 24 quai Ernest Ansermet , CH-1211 Geneva , Switzerland.

Nano Letters
|July 13, 2018
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Summary

Researchers quantitatively analyzed van der Waals heterostructures, revealing how constituent 2D materials dictate interfacial properties. This work establishes a general strategy for characterizing artificial semiconductors for tailored electronic applications.

Keywords:
interlayer excitonionic liquid gatingtransition-metal dichalcogenidesvan der Waals heterostructures

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Advancements in stacking atomically thin van der Waals crystals enable novel heterostructures.
  • Understanding how constituent 2D material properties determine interfacial characteristics is crucial.
  • Need for quantitative characterization of 2D material interfaces.

Purpose of the Study:

  • To quantitatively study the transport and optoelectronic response of WSe2-MoSe2 and WSe2-MoS2 interfaces.
  • To establish the energetic alignment of bands and interfacial band gaps.
  • To demonstrate a general strategy for characterizing interfacial properties of 2D heterostructures.

Main Methods:

  • Utilized ionic liquid gated transistors for spectroscopic analysis.
  • Employed photoluminescence and photocurrent measurements.
  • Investigated transport and optoelectronic properties of transition-metal dichalcogenide monolayers.

Main Results:

  • Quantitatively determined band alignment and interfacial band gaps for WSe2-MoSe2 and WSe2-MoS2.
  • Identified WSe2-MoSe2 interface as direct band gap and WSe2-MoS2 as indirect band gap.
  • Experimentally determined binding energy of interlayer excitons in WSe2-MoSe2.

Conclusions:

  • Van der Waals interfaces behave as artificial semiconductors with deterministically defined properties.
  • The employed technique offers a general strategy for quantitative interfacial characterization.
  • Results highlight the potential for designing novel electronic devices using 2D material heterostructures.