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Implementing Lateral MoSe2 P-N Homojunction by Efficient Carrier-Type Modulation.

Shuangqing Fan1, Wanfu Shen1, Chunhua An1

  • 1State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering , Tianjin University , No. 92 Weijin Road , Tianjin 300072 , China.

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Summary
This summary is machine-generated.

Researchers created a lateral molybdenum diselenide (MoSe2) p-n homojunction by modulating carrier types in a single flake. This breakthrough enables high-performance nanoscale electronic and optoelectronic devices.

Keywords:
MoSe2lateral p−n homojunctionphotocurrentrapid thermal annealingtriphenylphosphine coating

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Atomically thin two-dimensional (2D) materials are crucial for nanoscale electronic and optoelectronic devices.
  • Lateral p-n homojunctions offer advantages over vertically stacked ones but require precise carrier-type modulation within a single material flake, a significant technical challenge.

Purpose of the Study:

  • To achieve effective carrier-type modulation in a single molybdenum diselenide (MoSe2) flake.
  • To fabricate a lateral MoSe2 p-n homojunction using a novel sequential treatment method.

Main Methods:

  • Sequential treatment of MoSe2 flakes involving air rapid thermal annealing (RTA) and triphenylphosphine (PPh3) solution coating.
  • Characterization of carrier type modulation and mobility enhancement using field-effect transistor measurements.
  • Fabrication and electrical/photoresponse characterization of the lateral MoSe2 p-n homojunction.

Main Results:

  • Air RTA successfully converted naturally n-type MoSe2 to degenerated p-type, significantly improving hole mobility from 0.2 to 71.5 cm^2·V^-1·s^-1.
  • PPh3 solution coating enhanced n-doping and electron mobility from 78.6 to 412.8 cm^2·V^-1·s^-1.
  • The fabricated lateral MoSe2 p-n homojunction exhibited a high rectification ratio of 10^4, an ideality factor of 1.2, and an enhanced photoresponse of 1.3 A·W^-1 to visible light.

Conclusions:

  • Demonstrated a viable method for carrier-type modulation within a single MoSe2 flake, enabling the creation of lateral p-n homojunctions.
  • The achieved device performance highlights the potential of this approach for advanced nanoscale functional devices.
  • This technique offers a promising pathway for future electronic and optoelectronic applications utilizing 2D materials.