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Development of a Long-Wave Infrared Band-Edge (LWIR BE) thermometry instrument
J Marquis1, K Roodenko2, P Pinsukanjana2
1Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA.
The Review of Scientific Instruments
|August 3, 2018
Summary
Accurate substrate temperature measurement is crucial for molecular beam epitaxy (MBE). A new band-edge thermometry instrument using an InAs/InGaSb detector enables precise temperature monitoring for Gallium Antimonide (GaSb) substrates in MBE growth.
Area of Science:
- Materials Science
- Semiconductor Physics
- Optical Engineering
Background:
- Accurate substrate temperature measurement is critical for controlling molecular beam epitaxy (MBE) growth processes.
- Band-edge thermometry offers high-resolution temperature measurements (±1 °C) for semiconductor film growth.
- Gallium Antimonide (GaSb) substrates are increasingly used in III-V material systems.
Purpose of the Study:
- To develop an accurate method for measuring the temperature of GaSb substrates during MBE growth.
- To overcome the limitations of current thermometry instruments for GaSb substrate temperature monitoring.
Main Methods:
- Development of a novel band-edge thermometry instrument.
- Utilizing an InAs/InGaSb strained-layer superlattice detector.
- Detector sensitive to long-wave infrared (LWIR) wavelengths from 2-9.5 μm.
Main Results:
- The developed instrument is capable of measuring temperatures for GaSb substrates, which have a band gap corresponding to wavelengths greater than 2 μm.
- Overcomes the detection limitations of traditional InGaAs detectors (max ~1.7 μm).
Conclusions:
- The new band-edge thermometry instrument provides accurate temperature measurement for GaSb substrates in MBE.
- Enables precise process control for III-V semiconductor growth using GaSb substrates.
- Advances the capability of in-situ monitoring for advanced material epitaxy.
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