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Updated: Feb 6, 2026

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes
Published on: January 19, 2020
High-throughput synthesis of modified Fresnel zone plate arrays via ion beam lithography
Kahraman Keskinbora1, Umut Tunca Sanli1, Margarita Baluktsian1
1Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, 70569 Stuttgart, Germany.
Abstract:
Fresnel zone plates (FZP) are diffractive photonic devices used for high-resolution imaging and lithography at short wavelengths. Their fabrication requires nano-machining capabilities with exceptional precision and strict tolerances such as those enabled by modern lithography methods. In particular, ion beam lithography (IBL) is a noteworthy method thanks to its robust direct writing/milling capability. IBL allows for rapid prototyping of high-resolution FZPs that can be used for high-resolution imaging at soft X-ray energies. Here, we discuss improvements in the process enabling us to write zones down to 15 nm in width, achieving an effective outermost zone width of 30 nm. With a 35% reduction in process time and an increase in resolution by 26% compared to our previous results, we were able to resolve 21 nm features of a test sample using the FZP. The new process conditions are then applied for fabrication of large arrays of high-resolution zone plates. Results show that relatively large areas can be decorated with nanostructured devices via IBL by using multipurpose SEM/FIB instruments with potential applications in FEL focusing, extreme UV and soft X-ray lithography and as wavefront sensing devices for beam diagnostics.
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