Directional lasing in resonant semiconductor nanoantenna arrays

Area of Science:

• Nanophotonics and Metamaterials
• Semiconductor Nanotechnology
• Laser Physics

Background:

• High-index dielectric and semiconductor nanoparticles exhibit strong electric and magnetic resonances.
• Experimental demonstration of lasing action in such nanostructures has been lacking.
• Active dielectric nanoantennas offer potential for novel laser functionalities.

Purpose of the Study:

• To demonstrate directional lasing in active dielectric nanoantenna arrays.
• To investigate the underlying leaky resonance mechanism in coupled gallium arsenide (GaAs) nanopillars.
• To explore methods for controlling lasing properties like directionality and wavelength.

Main Methods:

• Fabrication of coupled gallium arsenide (GaAs) nanopillar arrays.
• Excitation of leaky resonance by partially breaking a bound state in the continuum.
• Characterization of lasing performance, including threshold, quality factor, and directionality.

Main Results:

• Achieved directional lasing with a low threshold and high quality factor (Q=2,750).
• Demonstrated control over emission directionality and wavelength through array geometry and temperature tuning.
• Leaky resonance in coupled nanopillars was identified as the key mechanism.

Conclusions:

• Successfully demonstrated directional lasing in active dielectric nanoantennas for the first time.
• The findings provide a pathway for developing compact, highly transparent surface-emitting laser devices.
• This work offers guidelines for designing next-generation nano-photonic laser systems.