Properties of homo- and hetero-Schottky junctions from first principle calculations

James C Greer1, Anders Blom2, Lida Ansari3

  • 1University of Nottingham Ningbo New Materials Institute & Department of Electrical and Electronic Engineering, University of Nottingham Ningbo China, 199 Taikang East Road, Ningbo 315100, People's Republic of China.

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