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Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule

Nan Fang1, Kosuke Nagashio1

  • 1Department of Materials Engineering , The University of Tokyo , Tokyo 113-8656 , Japan.

ACS Applied Materials & Interfaces
|August 28, 2018
PubMed

Keywords:
MoS2accumulation-mode FETdepletion capacitance−quantum capacitance transitionthickness scaling ruletwo-dimensional material

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