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Updated: Feb 5, 2026

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
Published on: December 11, 2013
Investigation of the mechanism for current induced network failure for spray deposited silver nanowires
D Fantanas1, A Brunton, S J Henley
1EPSRC CDT in MiNMaT, University of Surrey, Guildford GU2 7XH, United Kingdom. M-Solv Ltd, Oxonian Park, Kidlington OX5 1FP, United Kingdom.
Abstract:
Silver nanowires are one of the prominent candidates for the replacement of the incumbent indium tin oxide in thin and flexible electronics applications. Their main drawback is their inferior electrical robustness. Here, the mechanism of the short duration direct current induced failure in large networks is investigated by current stress tests and by examining the morphology of failures. It is found that the failures are due to the heating of the film and they initiate at the nanowire junctions, indicating that the main failure mechanism is based on the Joule heating of the junctions. This failure mechanism is different than what has been seen in literature for single nanowires and sparse networks. In addition, finite element heating simulations are performed to support the findings. Finally, we suggest ways of improving these films, in order to make them more suitable for device applications.
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