Plasma-enhanced reactive linear sputtering source for formation of silicon-based thin films

Area of Science:

• Materials Science
• Plasma Physics
• Thin Film Deposition

Background:

• Roll-to-roll deposition requires uniform thin films.
• Linear plasma sources are crucial for large-area deposition.
• Controlling film characteristics in such systems is challenging.

Purpose of the Study:

• To develop an inductively coupled plasma (ICP)-enhanced reactive sputter deposition system as a linear plasma source.
• To investigate the feasibility of controlling film thickness uniformity.
• To characterize the crystallinity of deposited silicon (Si) films.

Main Methods:

• Development of an ICP-enhanced reactive sputter deposition system with a rectangular target.
• Utilizing the system as a linear plasma source for roll-to-roll deposition.
• Analysis of longitudinal film thickness distribution.
• Characterization of Si film crystallinity using Raman spectroscopy and X-ray diffraction.

Main Results:

• Demonstrated feasibility of controlling film thickness uniformity by adjusting the power deposition profile of assisted ICPs.
• Achieved high Si film crystallinity ranging from 73% to 78% across all longitudinal positions.
• The developed system proved effective for producing uniform and crystalline Si films.

Conclusions:

• The developed ICP-enhanced linear plasma source is suitable for roll-to-roll deposition processes.
• Effective control over film thickness uniformity is achievable.
• High crystallinity of deposited Si films is attainable, meeting requirements for advanced applications.