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Updated: Feb 5, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies
H T Stinson1, A Sternbach2,3, O Najera4
1Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA. hstinson@physics.ucsd.edu.
Abstract:
Vanadium dioxide (VO2) is a material that undergoes an insulator-metal transition upon heating above 340 K. It remains debated as to whether this electronic transition is driven by a corresponding structural transition or by strong electron-electron correlations. Here, we use apertureless scattering near-field optical microscopy to compare nanoscale images of the transition in VO2 thin films acquired at both mid-infrared and terahertz frequencies, using a home-built terahertz near-field microscope. We observe a much more gradual transition when THz frequencies are utilized as a probe, in contrast to the assumptions of a classical first-order phase transition. We discuss these results in light of dynamical mean-field theory calculations of the dimer Hubbard model recently applied to VO2, which account for a continuous temperature dependence of the optical response of the VO2 in the insulating state.
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