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Role of GO and r-GO in resistance switching behavior of bilayer TiO2 based RRAM

Siddharth Srivastava1, Pritam Dey1, Shiva Asapu1,2

  • 1Plasmonics and Perovskites Laboratory, Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur, UP 208016, India.

Nanotechnology
|September 14, 2018
PubMed

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