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Published on: April 12, 2018
Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors.
Fangyuan Yang1,2,3, Zuocheng Zhang1,2,3, Nai Zhou Wang4,5,2
1State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China.
High-quality black phosphorus 2D electron gases (2DEGs) were achieved using a graphite local gate, enabling observation of the quantum Hall effect. This breakthrough reveals strong electron interactions, paving the way for exotic quantum states.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Black phosphorus field-effect transistors (FETs) enable studies of 2D electron systems.
- While 2D hole gases in black phosphorus show high mobility and quantum Hall effect, 2D electron gas (2DEG) quality has been limited, preventing quantum Hall effect observation.
Purpose of the Study:
- To improve the quality of 2D electron gas (2DEG) in black phosphorus FETs.
- To observe the quantum Hall effect in electron-doped black phosphorus.
Main Methods:
- Utilizing a prepatterned graphite local gate to define the 2DEG region.
- Employing graphite gates to screen impurity potentials and define 2DEG edges for well-defined edge channels.
- Conducting magneto-transport measurements under high magnetic fields.
Main Results:
- Achieved high-quality black phosphorus 2DEG.
- Observed precisely quantized Hall plateaus in electron-doped black phosphorus FETs.
- Revealed a large effective mass and enhanced Landé g-factor, indicating strong electron-electron interactions.
Conclusions:
- The graphite local gate technique successfully enhances black phosphorus 2DEG quality.
- Strong electron-electron interactions are confirmed in black phosphorus 2DEG.
- Potential for observing exotic many-body quantum states in the fractional quantum Hall regime is highlighted.
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