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    Area of Science:

    • Materials Science
    • Renewable Energy
    • Thin Film Technology

    Background:

    • Copper Indium Gallium Selenide (CIGS) is a promising photovoltaic material.
    • Efficient large-scale fabrication methods are crucial for CIGS solar cell commercialization.

    Purpose of the Study:

    • To develop a cost-effective electrodeposition method for CIGS precursor films.
    • To optimize high-temperature selenization for high-quality CIGS film fabrication.
    • To evaluate the potential of fabricated CIGS films for bifacial solar cell applications.

    Main Methods:

    • Potentiostatic electrodeposition for CIGS precursor film preparation.
    • High-temperature argon gas selenization in a tubular furnace.
    • Characterization using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and UV-Vis-NIR spectroscopy.

    Main Results:

    • Obtained CIGS films with preferential (112) orientation and good crystallinity (24.7 nm crystallite size).
    • Confirmed pure quaternary CIGS phases with chalcopyrite structure via Raman spectroscopy.
    • Demonstrated tunable bandgap (1.11 eV at 5.41% Ga concentration) and superior light absorption.

    Conclusions:

    • Electrodeposition offers a scalable, low-cost alternative to sputtering for CIGS film production.
    • Fabricated CIGS films exhibit high crystallinity, near-stoichiometry, and minimal impurity phases.
    • The developed method yields uniform, compact CIGS films with good adhesion, suitable for bifacial solar cells.