Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa₂O₄ Thin Films

A single-crystalline ZnGa₂O₄ epilayer was successfully grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition. This epilayer was used as a ternary oxide semiconductor for application in high-performance metal-semiconductor-metal photoconductive deep-ultraviolet (DUV) photodetectors (PDs). At a bias of 5 V, the annealed ZnGa₂O₄ PDs showed better performance with a considerably low dark current of 1 pA, a responsivity of 86.3 A/W, cut-off wavelength of 280 nm, and a high DUV-to-visible discrimination ratio of approximately 10⁷ upon exposure to 230 nm DUV illumination than that of as-grown ZnGa₂O₄ PDs. The as-grown PDs presented a dark current of 0.5 mA, a responsivity of 2782 A/W at 230 nm, and a photo-to-dark current contrast ratio of approximately one order. The rise time of annealed PDs was 0.5 s, and the relatively quick decay time was 0.7 s. The present results demonstrate that annealing process can reduce the oxygen vacancy defects and be potentially applied in ZnGa₂O₄ film-based DUV PD devices, which have been rarely reported in previous studies.