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Interface-Induced Anomalous Hall Conductivity in a Confined Metal
Oleg E Parfenov1, Dmitry V Averyanov1, Andrey M Tokmachev1
1National Research Center "Kurchatov Institute" , Kurchatov Sq. 1 , Moscow 123182 , Russia.
Researchers discovered a novel Hall conductivity in Eu silicide interfaces, crucial for spintronic devices. This effect allows precise control over spin signals, paving the way for advanced electronic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Silicon technology is crucial for spintronics.
- Metal silicides are key components in silicon-based devices.
- Interface electronic discontinuities significantly impact spin transport.
Purpose of the Study:
- To investigate a new type of Hall conductivity at Eu silicide interfaces.
- To explore the role of spin-orbit coupling and charge-spin interconversion.
- To demonstrate the tunability of spin signals for spintronic applications.
Main Methods:
- Utilizing sharp interfaces of Eu silicide (antiferromagnetic metal) sandwiched between Si and SiOx.
- Employing quasi-ballistic transport measurements.
- Analyzing anomalous Hall effect signals under transverse magnetic fields.
Main Results:
- Observed a novel Hall conductivity driven by sharp interfaces.
- Demonstrated quasi-ballistic transport probing spin-orbit coupling and charge-spin interconversion.
- Reported unusual line shapes in anomalous Hall effect signals due to interface interplay.
Conclusions:
- The two-channel nature of the observed effect allows efficient control over spin signal magnitude and sign.
- Selective interface engineering can isolate specific spin signals.
- This tunable effect offers new functional possibilities for future spintronic devices.
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