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Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride.

Qixing Wang1, Qi Zhang1, Xiaoxu Zhao2,3,4

  • 1Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore.

Nano Letters
|September 28, 2018
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Defects in hexagonal boron nitride (h-BN) exhibit anomalous photoluminescence upconversion, gaining energy through optical phonon absorption. This finding reveals strong defect-phonon coupling, crucial for understanding h-BN defect properties.

Keywords:
Hexagonal boron nitride (h-BN)PL upconversiondefectsoptical phonon absorption

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Quantum Optics

Background:

  • Hexagonal boron nitride (h-BN) exhibits single photon emission due to defects, with applications in quantum technologies.
  • Research interest is growing in understanding the nature and properties of these h-BN defects.

Purpose of the Study:

  • To investigate and report a novel defect property in h-BN: photoluminescence (PL) upconversion.
  • To elucidate the mechanism behind this anomalous PL upconversion and explore defect-phonon coupling.

Main Methods:

  • Photoluminescence (PL) upconversion was studied using excitation power, wavelength, and temperature-dependence.
  • Scanning transmission electron microscopy (STEM) and theoretical calculations were employed to analyze defect structures.

Main Results:

  • Anomalous PL upconversion with an energy gain of approximately 162 meV was observed in h-BN.
  • The upconversion mechanism was attributed to optical phonon absorption during one-photon excitation.
  • Strong defect-phonon coupling was evidenced by experimental and theoretical findings.

Conclusions:

  • Defects in h-BN demonstrate significant defect-phonon coupling, influencing their optical properties.
  • The observed PL upconversion provides new insights into defect behavior in h-BN.
  • STEM and theoretical calculations are vital for characterizing h-BN defect constitutions.