Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes

Semiconducting micro/nanostructures possessing naturally optical waveguiding behaviors and Fabry-Perot (F-P) like resonances are emerging as versatile building blocks for the assembly of photonic and optoelectronic devices, such as photodetectors, light-emitting diodes, lasers and so on. Individual ZnO micro/nanowires with a rectangular cross-section, such as microwires and microbelts possessing naturally smooth facets along both sides for good optical feedback, can be employed as an underlying F-P mode microcavity whilst as the gain medium for light amplification. In this context, electrically pumped F-P mode microlasers comprising a single ZnO:Ga microbelt and p-GaN substrate have been realized. By treating as the precondition, electrically driven exciton-polariton light-emitting behavior was achieved from the heterojunction diodes, which could be ascribed to strong exciton-photon coupling and waveguided nature of the synthesized microbelts. Once the applied bias exceeded the threshold value, an electrically pumped F-P mode lasing behavior could be observed, the lasing peaks centered at 410.5 nm and 450.5 nm respectively, accompanied with a dramatic narrowing of the spectral line-width to be around 1.0 nm emerging on the waveguided emission spectrum. Therefore, the realization of electrically pumped F-P mode lasing using single microbelt based heterojunction diodes opens the door not only to the fabrication of coherent light sources and model systems for waveguided resonators, but also affords a competitive candidate to develop electrically pumped and ultralow threshold polariton lasers.