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An atomistic model for the charge distribution in layered MoS2.

Yida Yang1, Michel Devel2, Zhao Wang1

  • 1Guangxi Key Laboratory for Relativistic Astrophysics, Department of Physics, Guangxi University, Nanning 530004, People's Republic of China.

The Journal of Chemical Physics
|October 4, 2018
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We developed an atomistic model to predict electric charge distribution in molybdenum disulfide (MoS2). This model accurately forecasts doping charge behavior in MoS2, showing good agreement with advanced computational methods.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Chemistry

Background:

  • Layered molybdenum disulfide (MoS2) is a crucial material in advanced electronics.
  • Accurate prediction of charge distribution is vital for optimizing MoS2-based devices.
  • Existing models may not fully capture the complex charge dynamics in MoS2.

Purpose of the Study:

  • To introduce a novel atomistic model for predicting electric charge distribution in layered MoS2.
  • To validate the model's predictions against established computational techniques.
  • To investigate charge enhancement and localization effects in MoS2 nanostructures.

Main Methods:

  • Development of an atomistic model simulating ion charges as Gaussian distributions with induced dipoles.
  • Self-consistent calculation scheme to determine charge distribution.
  • Comparison of model results with density-functional-theory (DFT) calculations for validation.

Main Results:

  • The charge-dipole model accurately predicts doping charge profiles in monolayer MoS2 flakes.
  • Model predictions show excellent agreement with DFT-calculated charge distributions.
  • Quantitative prediction of charge enhancement in MoS2 monolayer nanoribbons was achieved.

Conclusions:

  • The proposed atomistic charge-dipole model is a reliable tool for understanding charge behavior in MoS2.
  • The model reveals significant ionic charge-localization effects in MoS2 nanoribbons.
  • This work provides a foundation for designing and optimizing next-generation MoS2 electronic devices.