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Published on: October 11, 2016
X-ray detector based on Mn doped MgAl2O4 and Si photodiode
Toru Katsumata1, Haruna Takeuchi1, Shuji Komuro1
1Faculty of Science and Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585, Japan.
Manganese-doped Magnesium Aluminate (MgAl2O4) crystals coupled with Silicon PIN photodiodes show promise as X-ray detectors. These detectors exhibit linear response and strong luminescence, indicating potential for practical applications.
Area of Science:
- Materials Science
- Solid-State Physics
- Detector Technology
Background:
- Developing efficient X-ray detectors is crucial for various applications, including medical imaging and industrial inspection.
- Luminescent materials offer a pathway for converting X-ray energy into detectable optical signals.
Purpose of the Study:
- To evaluate the luminescence properties of Manganese-doped Magnesium Aluminate (MgAl2O4) crystals for X-ray detection.
- To investigate the performance of MgAl2O4:Mn crystals coupled with Silicon PIN photodiodes (PDs).
Main Methods:
- Fabrication and characterization of Mn-doped MgAl2O4 crystals.
- Coupling MgAl2O4:Mn crystals with Silicon PIN photodiodes (PDs).
- Irradiation with CuKα X-rays to measure luminescence intensity and output signal linearity.
Main Results:
- MgAl2O4:Mn crystals exhibited green luminescence peaking at 520 nm under X-ray irradiation.
- The output signal from the Silicon PIN photodiode (PD) showed a linear increase with X-ray intensity.
- Optimal luminescence intensity was observed in specimens with 3.0 mol.% Mn doping, with weak afterglow in 2.0 mol.% Mn specimens.
Conclusions:
- Mn-doped MgAl2O4 crystals demonstrate suitable luminescent properties for X-ray detection.
- The combination of MgAl2O4:Mn crystals and Silicon PIN photodiodes (PDs) presents a viable option for X-ray detector applications.
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