Design of polarization-insensitive high-visibility silicon-on-insulator quantum interferometer

We based on integrated silicon-on-insulator platforms design the key components of an on-chip interferometer, beam splitter and directional coupler included, valid in high-visibility interference at telecommunication wavelengths. Special attention is given to the equal-proportion beam splitting and directional coupling, which is achieved by carefully designing the geometric dimension of multi-mode interferometer structure. The proposed interferometer facilitates low loss, broad operating bandwidth, anticipated large tolerance on size variation induced in fabrication procedures, based on a particular wafer with silicon layer thickness of 320 nm. The most highlight property of polarization-insensitive, enables the path-selective qubits generation for bi-polarization that further makes possible quantum key distribution using high dimensional protocols. We numerically demonstrate interference at 1550 nm with visibilities of 99.50% and 93.99% for transverse-electric and transverse-magnetic polarization, respectively, revealing that the proposed interferometer structure is well capable of on-chip optical control especially in quantum optics regime.