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Arsenene nanoribbon edge-resolved strong magnetism
Sanmei Wang1, Xi Zhang, Yongli Huang
1Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060, China. zh0005xi@szu.edu.cn.
Strong magnetism is induced in hexagonal arsenene nanoribbons (AsNR) via edge quantum entrapment. This mechanism, verified by BOLS and DFT, localizes spin at the zigzag edge for magnetic storage applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Arsenene nanoribbons (AsNR) are a novel 2D material with potential electronic applications.
- Inducing magnetism in non-magnetic materials is crucial for spintronics and data storage.
Purpose of the Study:
- To propose and verify a mechanism for inducing strong magnetism in hexagonal-phase arsenene nanoribbons (AsNR).
- To explore the role of edge effects in the magnetic properties of AsNR.
Main Methods:
- Utilized bond-order-length-strength (BOLS) correlation theory.
- Performed density functional theory (DFT) calculations.
Main Results:
- A mechanism of edge quantum entrapment was proposed and validated.
- Edge bond contraction of 9.54% deepened the edge potential well.
- A net charge of 0.06 e- transferred to the edge, polarizing unpaired electrons.
- Net spin (antiferromagnetic or ferromagnetic) localized at the zigzag edge, dependent on ribbon width.
- Achieved strong magnetism of up to 10.92 emu g-1.
Conclusions:
- Edge quantum entrapment is an effective mechanism for inducing magnetism in AsNR.
- The localized spin at the zigzag edge opens possibilities for AsNR in magnetic storage devices.
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