Nonvolatile Memory Based on Molecular Ferroelectric/Graphene Field Effect Transistor

Ferroelectric thin films are extensively attractive as next-generation nonvolatile memories. Recently, molecular ferroelectrics (MFe), as an emerging new class, have been a new research focus because of their desirable characteristics such as good solution processability, tunable chemical properties, and bio-friendly compositions. However, traditional uniaxial MFe only possess one polar axis which greatly limits their application, as it requires restricted orientational control in single crystal. To achieve macroscopic ferroelectricity and thus fully realize technological advantages of MFe, development of multiaxes is imperative to maximize effective polarization in specific crystallographic orientations. Herein, we present an early exploration on polycrystalline multiaxial MFe thin films of [Hdabco][ReO₄] with a two-dimensional graphene hybrid nonvolatile memory device. The polarization switching of MFe is experimentally realized by the nonvolatile modulation of two current states in graphene. Such a hybrid device can exhibit large memory window ∼35 V implying its great potential in memory applications. Hence, by taking the advantages of multiple polarization axes of MFe, the low cost and large area MFe/graphene hybrid memory manifests new possibilities for the integration of these materials as flexible next generation memory devices.