Sub-kT/q switching in In₂O₃ nanowire negative capacitance field-effect transistors

Area of Science:

• Materials Science
• Nanoelectronics
• Solid-State Physics

Background:

• Conventional Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are limited by the Boltzmann distribution, restricting subthreshold swing (SS) to 60 mV/decade.
• This limitation impedes the reduction of power dissipation in electronic devices.

Purpose of the Study:

• To develop high-performance Indium Oxide (In2O3) nanowire (NW) negative capacitance field-effect transistors (NC-FETs).
• To overcome the Boltzmann limit for reduced power dissipation in nanoelectronics.

Main Methods:

• Integration of a ferroelectric P(VDF-TrFE) layer into the gate dielectric stack of In2O3 NW FETs.
• Utilizing a self-aligned fabrication scheme for device scaling down to sub-100 nm channel lengths.

Main Results:

• Achieved subthreshold swing (SS) below 60 mV/decade for over four decades of channel current.
• Demonstrated high saturation current density of 550 μA/μm and voltage gain of 25 in inverter circuits.
• Obtained an on/off current ratio >10^7, output current density of 960 μA/μm, and SS of 42 mV/decade at 200 nm channel length.

Conclusions:

• In2O3 NW NC-FETs show significant potential to surpass the Boltzmann limit in nanoelectronics.
• These devices offer a new pathway for developing low-power transistors suitable for portable applications.