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Updated: Feb 4, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films
Mohsin Raza1, Simone Sanna2, Lucia Dos Santos Gómez3
1Department of Energy Conversion and Storage, Technical University of Denmark, DTU Risø Campus, DK-4000 Roskilde, Denmark. vies@dtu.dk and Chimie des Interactions Plasma-Surface (ChIPS), University of Mons, 23 Place du Parc, 7000 Mons, Belgium. mohsinraza.khan@outlook.com.
Abstract:
The cubic phase of pure zirconia (ZrO2) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transport, which is superior to what is obtained with similar yttrium-stabilized cubic zirconia thin films.
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