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Related Experiment Video

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Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

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Published on: February 28, 2016

Tunable self-injection locked green laser diode.

Md Hosne Mobarok Shamim, Tien Khee Ng, Boon S Ooi

|October 16, 2018

Summary

This summary is machine-generated.

Researchers developed a novel tunable InGaN/GaN semiconductor laser diode using self-injection locking. This compact green laser offers a wide tuning range and stable performance for various applications.

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Area of Science:

Optoelectronics
Semiconductor Physics
Laser Technology

Background:

Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) semiconductor laser diodes are crucial for visible light applications.
Achieving wide tunability and stable performance in these lasers remains a significant challenge.

Purpose of the Study:

To demonstrate the first tunable InGaN/GaN semiconductor laser diode using a self-injection locking scheme.
To characterize the laser's tunability, spectral linewidth, side mode suppression ratio, and optical power.

Main Methods:

Employment of a self-injection locking scheme.
Demonstration of a tunable InGaN/GaN semiconductor laser diode.
Characterization of performance across different injection currents and temperatures.

Main Results:

Achieved a 7.11 nm tunability in the green spectrum (521.10-528.21 nm).
Exhibited a narrow spectral linewidth of approximately 69 pm and a side mode suppression ratio of 28 dB.
Reached a maximum optical power of 16.7 mW with stable performance across the tuning window.

Conclusions:

The developed laser system is the first of its kind, offering a compact and tunable green light source.
The laser's consistent high power, narrow linewidth, and stable performance make it suitable for spectroscopy, imaging, sensing, and visible light communication.