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On-chip valley topological materials for elastic wave manipulation.
Mou Yan1, Jiuyang Lu1, Feng Li1
1School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong, China.
Nature Materials
|October 24, 2018
Summary
Valley topological materials on silicon chips enable robust elastic wave transport. These novel materials demonstrate tunable edge state partitioning at channel intersections for advanced micro-ultrasonic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Topological Physics
Background:
- Valley topological materials utilize electron valley pseudospin for potential information processing.
- Valley pseudospin and edge transport have been explored in photonic and phononic systems.
- Elastic waves offer a new domain for investigating valley topological phenomena.
Purpose of the Study:
- To fabricate valley topological materials on silicon chips for elastic wave applications.
- To observe and characterize gyral valley states and valley edge transport in elastic systems.
- To investigate the robustness and control of valley edge states.
Main Methods:
- Utilizing micromanufacturing technology for fabricating silicon-based valley topological materials.
- Experimental observation of gyral valley states and valley edge transport for elastic waves.
- Analysis of edge state behavior under channel bending, randomness, and at intersections.
Main Results:
- Successful fabrication of valley topological materials on silicon chips.
- Observation of robust valley edge states protected by topology, resilient to bending and randomness.
- Demonstration of counterintuitive, freely adjustable partitioning of valley edge states at channel intersections for elastic waves.
Conclusions:
- Valley topological materials can be realized on silicon chips for elastic wave manipulation.
- Robust and controllable valley edge transport is achievable for elastic waves.
- These findings pave the way for on-chip high-performance micro-ultrasonic devices.
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