Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method
Jia-Cheng Yu1, Zai-Fa Zhou2, Jia-Le Su3
1Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. 220151251@seu.edu.cn.
Micromachines
|November 6, 2018
Summary
A novel 3D simulation accurately predicts deep reactive ion etching (DRIE) topography using advanced level set and Monte Carlo methods. This tool aids in optimizing micro-electro-mechanical systems (MEMS) fabrication processes.
Area of Science:
- Materials Science and Engineering
- Computational Physics
- Nanotechnology
Background:
- Deep reactive ion etching (DRIE) is crucial for micro-fabrication.
- Accurate simulation of DRIE topography is challenging.
- Existing models often lack comprehensive physical mechanisms.
Purpose of the Study:
- To develop a 3D topography simulation for DRIE.
- To incorporate advanced surface evolution and flux distribution models.
- To provide an accurate prediction tool for MEMS fabrication.
Main Methods:
- Utilized the narrow band level set method for surface evolution.
- Employed the Monte Carlo method with ray tracing for flux distribution.
- Incorporated physical and chemical mechanisms: ion-enhanced etching, ballistic transport, ion scattering, and sidewall passivation.
Main Results:
- Simulated time-dependent surface movements accurately.
- Investigated scalloping and lag effects in DRIE.
- Quantitatively analyzed simulation errors.
Conclusions:
- The developed simulator accurately predicts DRIE topography.
- It effectively models key etching phenomena.
- The tool is valuable for optimizing MEMS fabrication processes.
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