High Thermoelectric Performance in Two-Dimensional Tellurium: An Ab Initio Study
Zhibin Gao1, Gang Liu2, Jie Ren1
1Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering , Tongji University , Shanghai 200092 , China.
Abstract:
In 2016, bulk tellurium was experimentally observed as a remarkable thermoelectric material. Recently, two-dimensional (2D) tellurium, called tellurene, has been synthesized and has exhibited unexpected electronic properties compared with the 2D MoS2. They have also been fabricated into air-stable and highly efficient field-effect transistors. There are two stable 2D tellurene phases. One (β-Te) has been confirmed with an ultralow lattice thermal conductivity (κL). However, the study of the transport properties of the other more stable phase, α-Te, is still lacking. Here, we report the thermoelectric performance and phonon properties of α-Te using Boltzmann transport theory and first-principles calculations. A maximum ZT value of 0.83 is achieved under a reasonable hole concentration, suggesting that the monolayer α-Te is a potential competitor in the thermoelectric field.
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