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Updated: Feb 2, 2026

Nanostructured Ag-zeolite Composites as Luminescence-based Humidity Sensors
Published on: November 15, 2016
A CMOS MEMS Humidity Sensor Enhanced by a Capacitive Coupling Structure
Jian-Qiu Huang1, Baoye Li2, Wenhao Chen3
1Key Laboratory of MEMS of the Ministry of Education, Southeast University, Sipailou 2, Nanjing 210096, China. hjq@seu.edu.cn.
Abstract:
A capacitive coupling structure is developed to improve the performances of a capacitive complementary metal oxide semiconductor (CMOS) microelectromechanical system (MEMS) humidity sensor. The humidity sensor was fabricated by a post-CMOS process. Silver nanowires were dispersed onto the top of a conventional interdigitated capacitive structure to form a coupling electrode. Unlike a conventional structure, a thinner sensitive layer was employed to increase the coupling capacitance which dominated the sensitive capacitance of the humidity sensor. Not only static properties but also dynamic properties were found to be better with the aid of coupling capacitance. At 25 °C, the sensitive capacitance was 11.3 pF, the sensitivity of the sensor was measured to be 32.8 fF/%RH and the hysteresis was measured to be 1.0 %RH. Both a low temperature coefficient and a fast response (10 s)/recovery time (17 s) were obtained.
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