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Md Abdullah Al Hafiz1, Lakshmoji Kosuru2, Abdallah Ramini3

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Summary

This study presents a novel memory device utilizing microelectromechanical systems (MEMS) resonators. The device leverages nonlinear dynamics in a shallow arch beam to achieve tunable memory states using DC bias voltage.

Keywords:
bistabilityin-plane MEMSmechanical memoryshallow arch

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Area of Science:

  • Nonlinear Dynamics
  • Microelectromechanical Systems (MEMS)
  • Solid-State Devices

Background:

  • Microelectromechanical systems (MEMS) resonators offer potential for advanced computing.
  • Harnessing nonlinear dynamics in MEMS is crucial for novel functionalities.
  • Existing MEMS memory concepts often require complex fabrication or high operating voltages.

Purpose of the Study:

  • To demonstrate a novel memory device concept based on MEMS resonators.
  • To utilize the inherent nonlinear dynamics of a shallow arch MEMS beam for memory operation.
  • To achieve low-voltage, tunable memory states.

Main Methods:

  • Fabrication of a shallow arch, clamped-clamped MEMS beam resonator from silicon.
  • Electrostatic actuation of the MEMS resonator.
  • Exploitation of quadratic nonlinearity arising from arch curvature for bistability.
  • Electrical characterization to demonstrate switching between vibrational states.

Main Results:

  • Demonstrated bistability and hysteresis in the MEMS resonator's nonlinear dynamics.
  • Successfully switched between two distinct vibrational states by adjusting the DC bias voltage.
  • Confirmed the memory device concept through experimental electrical characterization.

Conclusions:

  • The nonlinear dynamics of a shallow arch MEMS resonator can be effectively utilized as a memory device.
  • The inherent quadratic nonlinearity provides flexibility in operating conditions and allows for lower actuation voltages.
  • This approach offers a promising pathway for developing efficient and low-power MEMS-based memory solutions.