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Updated: Feb 2, 2026

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate
Published on: September 28, 2019
Indium-Zinc-Tin-Oxide Film Prepared by Reactive Magnetron Sputtering for Electrochromic Applications
Ke-Ding Li1, Po-Wen Chen2, Kao-Shuo Chang3
1Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan. tyty01068@gmail.com.
Abstract:
This paper reports on the fabrication of indium-zinc-tin-oxide (IZTO) transparent conductive film deposited by direct current (DC) reactive magnetron sputtering. The electrical, structural, and optical properties of IZTO film were investigated by Hall measurement, X-ray diffraction (XRD), and optical transmission spectroscopy with various sputtering powers. The IZTO film prepared used power at 100 W showed the lowest resistivity of 5.2 × 10-4 Ω cm. To accomplish rapid switching and high optical modulation, we have fabricated an electrochromic device (ECD) consisting of an working electrode (WO₃ electrode film deposited on IZTO/ITO/glass) and a counter-electrode (Pt mesh) in 0.2 M LiClO₄/PC liquid solution. The device demonstrated an optical contrast of 44% and switching times of 4.6 s and 8.1 s for the coloring and bleaching state, respectively, at the wavelength of 550 nm.
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