A Novel High-Precision Digital Tunneling Magnetic Resistance-Type Sensor for the Nanosatellites' Space Application

Micro-electromechanical system (MEMS) magnetic sensors are widely used in the nanosatellites field. We proposed a novel high-precision miniaturized three-axis digital tunneling magnetic resistance-type (TMR) sensor. The design of the three-axis digital magnetic sensor includes a low-noise sensitive element and high-performance interface circuit. The TMR sensor element can achieve a background noise of 150 pT/Hz^1/2 by the vertical modulation film at a modulation frequency of 5 kHz. The interface circuit is mainly composed of an analog front-end current feedback instrumentation amplifier (CFIA) with chopper structure and a fully differential 4th-order Sigma-Delta (ΣΔ) analog to digital converter (ADC). The low-frequency 1/f noise of the TMR magnetic sensor are reduced by the input-stage and system-stage chopper. The dynamic element matching (DEM) is applied to average out the mismatch between the input and feedback transconductor so as to improve the gain accuracy and gain drift. The digital output is achieved by a switched-capacitor ΣΔ ADC. The interface circuit is implemented by a 0.35 μm CMOS technology. The performance test of the TMR magnetic sensor system shows that: at a 5 V operating voltage, the sensor can achieve a power consumption of 120 mW, a full scale of ±1 Guass, a bias error of 0.01% full scale (FS), a nonlinearity of x-axis 0.13% FS, y-axis 0.11% FS, z-axis 0.15% FS and a noise density of x-axis 250 pT/Hz^1/2 (at 1 Hz), y-axis 240 pT/Hz^1/2 (at 1 Hz), z-axis 250 pT/Hz^1/2 (at 1 Hz), respectively. This work has a less power consumption, a smaller size, and higher resolution than other miniaturized magnetometers by comparison.