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Cell Patterning on Photolithographically Defined Parylene-C: SiO2 Substrates
Published on: March 7, 2014
SF₆ Optimized O₂ Plasma Etching of Parylene C
Lingqian Zhang1, Yaoping Liu2, Zhihong Li3,4
1Institute of Microelectronics, Peking University, Beijing 100871, China. zlqpku@gmail.com.
Abstract:
Parylene C is a widely used polymer material in microfabrication because of its excellent properties such as chemical inertness, biocompatibility and flexibility. It has been commonly adopted as a structural material for a variety of microfluidics and bio-MEMS (micro-electro-mechanical system) applications. However, it is still difficult to achieve a controllable Parylene C pattern, especially on film thicker than a couple of micrometers. Here, we proposed an SF₆ optimized O₂ plasma etching (SOOE) of Parylene C, with titanium as the etching mask. Without the SF₆, noticeable nanoforest residuals were found on the O₂ plasma etched Parylene C film, which was supposed to arise from the micro-masking effect of the sputtered titanium metal mask. By introducing a 5-sccm SF₆ flow, the residuals were effectively removed during the O₂ plasma etching. This optimized etching strategy achieved a 10 μm-thick Parylene C etching with the feature size down to 2 μm. The advanced SOOE recipes will further facilitate the controllable fabrication of Parylene C microstructures for broader applications.
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