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Updated: Feb 2, 2026
07:26
Synthesis and Microdiffraction at Extreme Pressures and Temperatures
Published on: October 7, 2013
11.7K
High Temperature AlGaN/GaN Membrane Based Pressure Sensors.
Durga Gajula1, Ifat Jahangir2, Goutam Koley3
1Holcombe Department of Electrical and Computer Engineering, Clemson University, Anderson, SC 29625, USA. gdraophy@gmail.com.
Micromachines
|November 15, 2018
Summary
This study presents a highly sensitive Gallium Nitride (GaN) micro-pressure sensor for high temperatures. It demonstrates ultra-high sensitivity and repeatable performance up to 200 °C.
Area of Science:
- Materials Science
- Nanotechnology
- Sensor Technology
Background:
- High-temperature environments pose challenges for conventional pressure sensors.
- Gallium Nitride (GaN) offers promising material properties for high-temperature electronics.
Purpose of the Study:
- To design and fabricate a highly sensitive micro-scale pressure sensor using GaN for high-temperature applications.
- To evaluate the performance characteristics of the GaN-based pressure sensor.
Main Methods:
- Fabrication of a GaN diaphragm-based micro-scale pressure sensor with an AlGaN/GaN heterostructure field effect transistor (HFET) deflection transducer.
- Performance characterization over a 20 kPa pressure range and up to 200 °C.
- Finite element simulations for strain distribution analysis.
Main Results:
- Achieved ultra-high sensitivity of approximately 0.76%/kPa.
- Obtained a high signal-to-noise ratio of 16 dB under optimal subthreshold bias.
- Determined a high gauge factor of 260 from simulations.
- Demonstrated repeatable sensor performance over multiple pressure cycles up to 200 °C.
Conclusions:
- The developed GaN micro-pressure sensor is suitable for high-temperature applications.
- The sensor exhibits excellent sensitivity, signal-to-noise ratio, and stability.
- This technology holds potential for advanced sensing in extreme environments.
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