Photolithographic Patterning of Cytop with Limited Contact Angle Degradation

Cytop is a commercially available amorphous fluoropolymer with excellent characteristics including electric insulation, water and oil repellency, chemical resistance, and moisture-proof property, making it an attractive material as hydrophobic layers in electrowetting-on-dielectric (EWOD) devices. However, its highly hydrophobic surface makes it difficult for photoresists to be directly coated on the surface. To pattern Cytop, plasma treatment prior to applying photoresists is required to promote the adhesion between the photoresist and the Cytop coating. This approach inevitably causes hydrophobicity loss in the final EWOD devices. Thus, a damage-reduced recipe for Cytop patterning is urgently needed. In this paper, we first characterized the damage caused by two categories of surface treatment methods: plasma treatment and metal treatment. Parameters such as plasma gas source (Ar/O₂), plasma treatment time (0⁻600 s), metal target (Al/Cu/Cr/Au), metal deposition process (magnetron sputtering or e-beam evaporation) were varied. Film thickness, wettability, and roughness were quantified by ellipsometry measurements, contact angle measurements, and atom force microscope (AFM), respectively. We then evaluated the effectiveness of annealing in damage reduction. Experimental results show that: (1) annealing is necessary in restoring hydrophobicity as well as smoothing surfaces; (2) specified film thickness can be obtained by controlling plasma treatment time; (3) "Ar/O₂ plasma treatment + an AZ5214 soft mask + annealing" is a feasible recipe; (4) "an Al/Cu/Cr/Au hard mask + annealing" is feasible as well.