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Annealing SiO2:Ge superlattices causes germanium (Ge) nanoparticles to form, crystallize, and eventually dissolve, creating voids. Photoluminescence originates from interface defects, not the nanoparticles themselves.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Superlattices composed of alternating SiO2 and Ge layers are fabricated using multilayer magnetron deposition.
  • These structures are then subjected to annealing in a nitrogen atmosphere at temperatures ranging from 500-750 °C.

Purpose of the Study:

  • To investigate the structural and optical evolution of SiO2:Ge superlattices during annealing.
  • To study the formation, growth, crystallization, and dissolution of germanium nanoparticles (nps).

Main Methods:

  • Simultaneous grazing-incidence small- and wide-angle X-ray scattering (GISAXS/GIWAXS).
  • Transmission electron microscopy (TEM).
  • (Time-resolved) photoluminescence (PL) spectroscopy.

Main Results:

  • In as-deposited films, small Ge clusters were already aggregated and laterally correlated.
  • Ge nanoparticles began forming at annealing temperatures of 550 °C, remaining partially amorphous before crystallizing around 600 °C.
  • At higher temperatures, Ge nanoparticles dissolved, leading to void formation in the SiO2 matrix.

Conclusions:

  • The annealing process dictates the phase and morphology of Ge nanoparticles within the SiO2 matrix.
  • Observed photoluminescence is attributed to defects at the Ge nanoparticle/SiO2 interface, persisting even after nanoparticle dissolution.