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Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride
Kayoung Lee1,2, En-Shao Liu1, Kenji Watanabe3
1Microelectronics Research Center , The University of Texas at Austin , Austin , Texas 78758 , United States.
ACS Applied Materials & Interfaces
|November 16, 2018
Summary
Interface states in bilayer graphene were studied using conductivity measurements. The density of interface states decreases with increasing band gap, but total states increase linearly due to band edge localization.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanoscience
Background:
- Threshold voltages in bilayer graphene reveal insights into band gap values and interface states.
- Understanding interface states is crucial for optimizing electronic properties of graphene-based devices.
Purpose of the Study:
- To measure and analyze the conductivity of hexagonal boron nitride-encapsulated bilayer graphene.
- To extract transport gap values and estimate the average density of interface states (D_it).
- To investigate the relationship between bilayer graphene band gap and interface state characteristics.
Main Methods:
- Measured conductivity of bilayer graphene as a function of back and top gates.
- Utilized a second bilayer graphene as a top gate for precise control.
- Extracted transport gap values by assuming zero interface trap states.
Main Results:
- Extracted transport gap values closely matched theoretical predictions.
- Estimated average density of interface states per energy (D_it) decreases as the bilayer graphene band gap increases.
- Total interface states within the gap increase linearly with the band gap, attributed to localized states at band edges.
Conclusions:
- The density of interface states within the band gap is not constant but inversely related to the band gap size.
- Interface states exhibit a complex behavior, with a linear increase in total states despite a decreasing D_it.
- This study provides critical data for understanding and controlling interface properties in advanced graphene electronics.
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