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Updated: Feb 2, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Fabrication of (111)-Oriented Nanotwinned Au Films for Au-to-Au Direct Bonding
John A Wu1, Chih-Yang Huang2, Wen-Wei Wu3
1Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan. defrosticicle@gmail.com.
Abstract:
We reported that highly (111)-oriented nanotwinned gold can be fabricated by periodical-reverse electroplating. The as-deposited films are shown to have a strong (111) preferred orientation, increasing with the reverse current time. The ratios of I(111)/I(220) and I(111)/I(200) in X-ray diffraction signals indicates a strong (111) preferred orientation. Using the advantage of the fast surface diffusion of (111) plane compared to the other planes of gold, we performed direct bonding with different thicknesses. Grain growth was observed over two films' interfaces to eliminate the bonding interface, when annealed at 250 °C for 1 h. Shear tests were performed to gain insight on the bonding quality. All the chips failed at either the silicon substrate or substrate-adhesion layer, showing possible higher strength than the tested maximum, 40.8 MPa.
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