Related Experiment Video
Updated: Feb 2, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Gate Switching of Ultrafast Photoluminescence in Graphene
Di Huang1, Tao Jiang1, Yu Zhang1
1State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics , Fudan University , Shanghai 200433 , China.
Abstract:
The control of optical properties by electric means is the key to optoelectronic applications. For atomically thin two-dimensional (2D) materials, the natural advantage lies in that the carrier doping could be readily controlled through the electric gating effect, possibly affecting the optical properties. Exploiting this advantage, here we report the gate switching of the ultrafast upconverted photoluminescence from monolayer graphene. The luminescence can be completely switched off by the Pauli-blocking of one-photon interband transition in graphene with an on/off ratio exceeding 100, which is remarkable compared to other 2D semiconductors and 3D bulk counterparts. The chemical potential and pump fluence dependences of the luminescence are nicely described by a two-temperature model, including both the hot carrier dynamics and carrier-optical phonon interaction. This gate switchable and background-free photoluminescence can open up new opportunities for graphene-based ultrafast optoelectronic applications.
Related Concept Videos
Photoluminescence: Applications
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Photoluminescence: Fluorescence and Phosphorescence
A pair of electrons in a...
Underflow Gates
Ligand-Gated Ion Channel Receptor: Gating Mechanism
Non-gated Ion Channels
Compared to the gated ion channels, the non-gated channels, also known as leakage or passive channels, have no gating mechanism....

