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A capacitor is charged by passing an electric current through it, which causes the plates to start accumulating an electrostatic charge. Since the strength of the charging current is maximum when the capacitor plates are uncharged and gradually decreases exponentially until the capacitor is fully charged, the charging process is neither instantaneous nor linear. The property of a capacitor to store a charge on its plates is called its capacitance.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits.

Robyn Worsley1, Lorenzo Pimpolari2, Daryl McManus1

  • 1School of Chemistry , University of Manchester , Manchester M13 9PL , United Kingdom.

ACS Nano
|November 20, 2018
PubMed
Summary

Inkjet printing enables the cost-effective fabrication of all-2D material capacitors using hexagonal boron nitride (hBN) inks. These printed capacitors exhibit excellent performance, paving the way for flexible electronic devices.

Keywords:
2D-materialscapacitorsinkjetintegrated circuitsprinted electronics

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Well-defined insulating layers are crucial for integrated circuits.
  • Two-dimensional (2D) materials like hexagonal boron nitride (hBN) offer unique dielectric properties.
  • Solution-based techniques, especially inkjet printing, provide cost-effective and versatile fabrication methods for 2D materials.

Purpose of the Study:

  • To fabricate all-2D material capacitors using inkjet-printed hexagonal boron nitride (hBN) dielectric inks.
  • To evaluate the performance of these printed capacitors, including areal capacitance, dielectric constant, and breakdown field.
  • To demonstrate the application of these printed capacitors in functional electronic demonstrators.

Main Methods:

  • Utilized water-based and biocompatible graphene and hBN inks for inkjet printing.
  • Fabricated capacitors with varying hBN dielectric thicknesses, including sub-micrometer layers.
  • Characterized over 100 devices to ensure statistical significance of performance metrics.

Main Results:

  • Achieved an areal capacitance of 2.0 ± 0.3 nF cm⁻² for a ~3 μm hBN dielectric thickness.
  • Derived a dielectric constant of 6.1 ± 1.7 with negligible leakage currents.
  • Demonstrated a breakdown field of 1.9 ± 0.3 MV cm⁻¹ for the inkjet-printed hBN dielectric.

Conclusions:

  • Inkjet printing is a viable, low-cost method for fabricating high-performance 2D material capacitors.
  • The developed hBN dielectric layers are suitable for use in flexible electronic components.
  • Successfully demonstrated functional resistor-capacitor filters and field-effect transistors using the printed components.