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Updated: Feb 2, 2026

Designing Porous Silicon Films as Carriers of Nerve Growth Factor
Published on: January 25, 2019
Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements
Wei He1, Rihan Wu2, Igor V Yurkevich3
1College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, People's Republic of China.
Abstract:
We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers' non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.
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