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Micro-accelerometer Based on Vertically Movable Gate Field Effect Transistor.

Heung Seok Kang1, Kang-Hee Lee1, Dong-Youk Yang2

  • 11Korea Atomic Energy Research Institute, 150 Deokjin-dong, Yuseong-gu, Daejeon, Republic of Korea.

Nano-Micro Letters
|November 23, 2018
PubMed
Summary
This summary is machine-generated.

A novel vertically movable gate field effect transistor (VMGFET) was developed for micro-accelerometers. This innovative sensor demonstrates promising sensitivity and structural integrity for vibration detection applications.

Keywords:
MEMSMicro-accelerometerSuspended gate FETVMGFETVertically movable gate FET

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Mechanical Engineering

Background:

  • Micro-accelerometers are crucial for various sensing applications.
  • Traditional accelerometers face limitations in sensitivity and integration.
  • Vertically movable gate field effect transistors (VMGFETs) offer a new approach.

Purpose of the Study:

  • To propose and demonstrate a VMGFET for micro-accelerometer applications.
  • To investigate the mechanical behavior and structural integrity of the VMGFET under vibration.
  • To characterize the electrical performance and sensitivity of the fabricated VMGFET accelerometer.

Main Methods:

  • Finite element analysis (FEA) was employed to simulate the mechanical response of the VMGFET.
  • The 1952 Kern County Earthquake ground acceleration spectrum was used for vibration simulation.
  • A prototype VMGFET accelerometer was fabricated using silicon on insulator (SOI) wafer.
  • Current-voltage (I-V) characteristics were measured to determine electrical parameters.

Main Results:

  • The VMGFET utilizes an air gap insulator, enabling vertical gate movement.
  • Simulations confirmed structural integrity under seismic vibration conditions.
  • The fabricated prototype exhibited a threshold voltage of 2.32 V.
  • Measured device sensitivity was 9.36-9.42 mV/g at low frequencies.
  • The first natural frequency was determined to be 1230 Hz.
  • Signal profile smoothness was within a 3 dB range up to 1 kHz.

Conclusions:

  • The demonstrated VMGFET is a viable candidate for micro-accelerometer applications.
  • The device shows good sensitivity and a high natural frequency.
  • VMGFETs offer potential for advanced vibration sensing and structural health monitoring.