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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO /TiO /TiN Structure

Debanjan Jana1, Subhranu Samanta1, Sourav Roy1

  • 1Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 333 Taiwan, ROC.

Nano-Micro Letters
|November 23, 2018
PubMed

Keywords:
CrOxDevice sizeResistive switching memorySlope/shape factorTiOx

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