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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Proximity-induced supercurrent through topological insulator based nanowires for quantum computation studies
Biplab Bhattacharyya1,2, V P S Awana1,2, T D Senguttuvan1,2
1Academy of Scientific and Innovative Research (AcSIR), National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S Krishnan Road, New Delhi, 110012, India.
Abstract:
Proximity-induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault-tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaev's one-dimensional quantum wires, which pose a huge experimental challenge in terms of scalability of the current single nanowire based devices. Here, we address this problem by realizing robust superconductivity in junctions of fabricated topological insulator (Bi2Se3) nanowires proximity-coupled to conventional s-wave superconducting (W) electrodes. Milling technique possesses great potential in fabrication of any desired shapes and structures at nanoscale level, and therefore can be effectively utilized to scale-up the existing single nanowire based design into nanowire based network architectures. We demonstrate the dominant role of ballistic topological surface states in propagating the long-range proximity induced superconducting order with high IcRN product in long Bi2Se3 junctions. Large upper critical magnetic fields exceeding the Chandrasekhar-Clogston limit suggests the existence of robust superconducting order with spin-triplet cooper pairing. An unconventional inverse dependence of IcRN product on the width of the nanowire junction was also observed.
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