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Updated: Feb 2, 2026

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition
Published on: December 21, 2015
Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfO Thin Film
1Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, South Korea.
Abstract:
In this study, we implemented a resistance change memory (ReRAM) device using a SiC layer with excellent physical properties. We fabricated devices composed of Ti/SiC/Pt and Ti/HfO/SiC/Pt structures and investigated their memory characteristics. The Ti/SiC/Pt ReRAM devices exhibited stable bipolar resistive switching characteristics but had a relatively small memory window, whereas the Ti/HfO/SiC/Pt ReRAM devices had a large memory window and low operating voltage. In addition, the Ti/HfO/SiC/Pt ReRAM devices exhibited stable endurance characteristics over 500 cycles and excellent retention characteristics at room temperature and high temperatures for 1×10⁴ s. Further, the Ti/HfO/SiC/Pt ReRAM devices exhibited multi-level conduction states by modulating the reset stop voltage, and each resistance level had excellent endurance characteristics. The average transmittance of the HfO/SiC bilayer in visible light was 87%. Such a high value indicates that the HfO/SiC bilayer fabricated by the stacking method is expected to be a suitable material for highly reliable nonvolatile memory and transparent electronic devices, even in harsh environments.
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