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Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

Yifei Huang1, Ying Wang2, Xiaofei Kuang3

  • 1Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China. 162040160@hdu.edu.cn.

Micromachines
|November 25, 2018
PubMed

Keywords:
breakdown voltage (BV)edge terminationjunction termination extension (JTE)silicon carbide (SiC)

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