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Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

Seil Kim1, Min-Pyo Lee2, Sung-June Hong3

  • 1Department of Radio Science and Engineering, Chungnam National University, Daejeon 34134, Korea. ksl4896@naver.com.

Micromachines
|November 28, 2018
PubMed

Keywords:
GaN high electron mobility transistor (HEMT)Ku-bandamplitude balanceasymmetric power combiningphase balancepower amplifier

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