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Strain-controlled high harmonic generation with Dirac fermions in silicene
1National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621999, China. qinrui.phy@outlook.com ziyuch@caep.ac.cn.
Nanoscale
|November 28, 2018
Summary
Mechanical strain can control high harmonic generation (HHG) in two-dimensional (2D) materials like silicene. This tuning enhances HHG intensity, paving the way for novel nano-devices and understanding Dirac fermion behavior.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanoscience
Background:
- Two-dimensional (2D) materials with zero band gaps possess tunable electronic properties.
- High harmonic generation (HHG) in these materials is crucial for nanoscale optoelectronics and studying massless Dirac fermions.
- Controlling HHG by modulating material electronic structures remains an underexplored area.
Purpose of the Study:
- To investigate the control of HHG in 2D materials through mechanical strain.
- To explore the impact of mechanical engineering on the electronic structures of 2D materials.
- To demonstrate a method for enhancing HHG intensity via strain engineering.
Main Methods:
- Utilizing an ab initio approach based on time-dependent density-functional theory (TDDFT).
- Applying biaxial and uniaxial mechanical strains to monolayer silicene.
- Analyzing the modulation of band structures and preservation of Dirac cones.
Main Results:
- HHG process is sensitive to strain-induced band structure modulations in silicene.
- Significant enhancement of harmonic intensity, up to an order of magnitude, was observed.
- Strain preserved the Dirac cones in the monolayer silicene.
Conclusions:
- Mechanical tuning of electronic structures offers controllable HHG in 2D materials.
- Strain engineering in silicene can significantly enhance HHG intensity.
- This approach opens avenues for efficient solid-state optoelectronic nano-devices and understanding ultrafast nonlinear responses in Dirac materials.
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