Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Ye-Jin Park1, Hyeon-Tak Kwak1, Seung-Bo Chang1

  • 1Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, South Korea.

Journal of Nanoscience and Nanotechnology
|November 30, 2018
PubMed

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