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DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged

Hyeon-Tak Kwak1, Kyu-Won Jang1, Hyun-Jung Kim1

  • 1Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, South Korea.

Journal of Nanoscience and Nanotechnology
|November 30, 2018
PubMed

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